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PDF BC858AWT1 Data sheet ( Hoja de datos )

Número de pieza BC858AWT1
Descripción General Purpose Transistors
Fabricantes Motorola Inc 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC856AWT1,BWT1
BC857AWT1,BWT1
BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage
VCEO –65 –45 –30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
VEBO
IC
–80
–5.0
–100
–50
–5.0
–100
–30
–5.0
–100
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
833
– 55 to +150
°C/W
°C
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
Collector – Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min Typ Max Unit
–65 — — V
–45 —
–30 —
–80 — — V
–50 —
–30 —
–80 — — V
–50 —
–30 —
–5.0 — — V
–5.0 —
–5.0 —
— — –15 nA
— — –4.0 µA
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

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BC858AWT1 pdf
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 13. Thermal Response
ZθJC(t) = r(t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
–200
1 s 3 ms
–100
–50 TA = 25°C TJ = 25°C
BC558
–10
BC557
BC556
–5.0
–2.0
–1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0 –10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5

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