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PDF BC857CDW1T1 Data sheet ( Hoja de datos )

Número de pieza BC857CDW1T1
Descripción Dual General Purpose Transistors
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BC856BDW1T1,
BC857BDW1T1 Series,
BC858BDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858BDW1T1 = 3K
BC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Continuous
Symbol BC856 BC857 BC858 Unit
VCEO
VCBO
VEBO
IC
−65
−80
−5.0
−100
−45
−50
−5.0
−100
−30
−30
−5.0
−100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
Q1
(4)
(2)
(5)
(1)
Q2
(6)
6 54
1
23
SOT−363/SC−88
CASE 419B
Style 1
DEVICE MARKING
3xm
See Table
3x = Specific Device Code
x = B, F, G, K, L
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC856BDW1T1 SOT−363 3000 Units/Reel
BC857BDW1T1 SOT−363 3000 Units/Reel
BC857CDW1T1 SOT−363 3000 Units/Reel
BC858BDW1T1 SOT−363 3000 Units/Reel
BC858CDW1T1 SOT−363 3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BC856BDW1T1/D

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BC857CDW1T1 pdf
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0 1.0
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
10 100 1.0 k
t, TIME (ms)
Figure 13. Thermal Response
10 k
100 k
1.0 M
−200
1 s 3 ms
−100
−50 TA = 25°C TJ = 25°C
BC558
−10
BC557
BC556
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0 −10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable opera-
tion. Collector load lines for specific circuits must fall be-
low the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) 150°C.
TJ(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
http://onsemi.com
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