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PDF BC847S Data sheet ( Hoja de datos )
| Número de pieza | BC847S | |
| Descripción | NPN Silicon AF Transistor Array | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistors
with good matching in one package
• BC846S / U, BC847S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC846S/ BC846U/ BC847S
BC846S
BC846U
BC847S
C1 B2 E2
654
TR2
TR1
123
E1 B1 C2
EHA07178
Type
BC846S
BC846U
BC847S
Marking
Pin Configuration
Package
1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1 2012-04-04
1 page  
BC846S/ BC846U/ BC847S
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 3
h FE 5 100 C
25 C
102 -50 C
5
EHP00365
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 2
mA
ΙC
10 1
5
100 C
25 C
-50 C
EHP00367
10 1 100
55
10 0
10 -2
5 10 -1 5 10 0
5 101 mA 10 2
ΙC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
10 -1
0
0.1 0.2 0.3 0.4 V 0.5
VCEsat
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 2
Ι C mA
10 1
5
10 0
5
10 -1
0
100 C
25 C
-50 C
0.2 0.4 0.6 0.8
EHP00364
10 4
nA
Ι CB0
10 3
5
10 2
5
10 1
5
V 1.2
V BEsat
10 0
5
10 -1
0
EHP00381
max
typ
50 100 C 150
TA
5 2012-04-04
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BC847S.PDF ] | |
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