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PDF BC846AWT1 Data sheet ( Hoja de datos )

Número de pieza BC846AWT1
Descripción General Purpose Transistors
Fabricantes Motorola Inc 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC846 BC847 BC848 Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
DEVICE MARKING
RqJA
PD
TJ, Tstg
833
2.4
– 55 to +150
°C/W
mW/°C
°C
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min Typ Max Unit
65 — — V
45 — —
30 — —
80 — — V
50 — —
30 — —
80 — — V
50 — —
30 — —
6.0 — — V
6.0 —
5.0 —
— — 15 nA
— — 5.0 µA
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

1 page




BC846AWT1 pdf
BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.035
0.9
0.075
1.9
0.028
0.7
SOT–323/SC–70
inches
mm
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–323/SC–70
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5

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