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PDF BC81716 Data sheet ( Hoja de datos )
| Número de pieza | BC81716 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
✪
PARTMARKING DETAILS
BC81716 – 6AZ
BC81725 – 6BZ
BC81740 – 6CZ
COMPLEMENTARY TYPE
– BC807
BC817
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
IBM
Ptot
Tj:Tstg
SOT23
VALUE
50
45
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1 µA VCB=20V, IE=0
5 µA VCB=20V, IE=0, Tamb=150°C
10 µA VEB=5V, IC=0
700 mV IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(on)
1.2 V
IC=500mA, VCE=1V*
Static Forward Current hFE
Transfer Ratio
BC81716
BC81725
BC81740
All bands
Transition Frequency
fT
100 250 IC=100mA, VCE=1V*
160 400 IC=100mA, VCE=1V*
250 600 IC=100mA, VCE=1V*
40 IC=500mA, VCE=1V*
200 MHz IC=10mA, VCE=5V
f=35MHz
Output Capacitance
Cobo
*Measured under pulsed conditions.
5.0
pF VCB=10V, f=1MHz
TBA
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| PDF Descargar | [ Datasheet BC81716.PDF ] | |
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