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PDF BC808 Data sheet ( Hoja de datos )
| Número de pieza | BC808 | |
| Descripción | PNP Silicon AF Transistors | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
BC807, BC808
3
2
1 VPS05161
Type
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
Marking
5As
5Bs
5Cs
5Es
5Fs
5Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BC807
BC808
45 25
50 30
55
500
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Nov-29-2001
1 page  
BC807, BC808
Base-emitter saturation voltage
IC = f(VBEsat), hFE = 10
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3
Ι C mA
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00214
10 3
Ι C mA
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00215
101 101
55
100 100
55
10 -1
0
1.0 2.0
DC current gain hFE = f(IC)
VCE = 1V
3.0 V 4.0
V BEsat
10 -1
0
0.2 0.4 0.6 V 0.8
V CEsat
10 3
h FE 5 100 ˚C
25 ˚C
-50 ˚C
10 2
5
EHP00216
10 1
5
10 0
10 -1
10 0
10 1 10 2 mA 10 3
ΙC
5
Nov-29-2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BC808.PDF ] | |
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