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PDF BC636 Data sheet ( Hoja de datos )
| Número de pieza | BC636 | |
| Descripción | High Current Transistors | |
| Fabricantes | Motorola Inc | |
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Hay una vista previa y un enlace de descarga de BC636 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Current Transistors
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 636 638 640 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–45 –60 –80 Vdc
–45 –60 –80 Vdc
–5.0 Vdc
–0.5 Adc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage*
(IC = –10 mAdc, IB = 0)
BC636
BC638
BC640
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
BC636
BC638
BC640
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
V(BR)EBO
ICBO
Min
–45
–60
–80
–45
–60
–80
–5.0
—
—
Order this document
by BC636/D
BC636
BC638
BC640
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
——
Vdc
——
——
——
— — Vdc
—
–100
nAdc
— –10 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC636.PDF ] | |
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