PDF BC558B Data sheet ( Hoja de datos )

Número de pieza	BC558B
Descripción	Amplifier Transistors(PNP Silicon)
Fabricantes	ON Semiconductor
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No Preview Available ! www.DataSheet4U.com BC556B, BC557A, B, C, BC558B, C Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC556 −65 BC557 −45 BC558 −30 Collector - Base Voltage VCBO Vdc BC556 −80 BC557 −50 BC558 −30 Emitter - Base Voltage Collector Current − Continuous Collector Current − Peak Base Current − Peak Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC ICM IBM PD −5.0 −100 −200 −200 625 5.0 Vdc mAdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 2 1 http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 1 2 STYLE 17 3 MARKING DIAGRAM BC 55xx AYWW G G BC55x = Device Code x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: BC556B/D 1 page BC556B, BC557A, B, C, BC558B, C 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 0.01 0.1 0.2 0.5 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 13. Thermal Response 200 ZqJC(t) = (t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 500 1.0 k 2.0 k 5.0 k 10 −200 −100 −50 −10 −5.0 −2.0 −1.0 1 s 3 ms TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Active Region − Safe Operating Area http://onsemi.com 5 5 Page

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