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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC556/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
BC556,B
BC557A,B,C
BC558B
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 556 557 558 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–65 –45 –30 Vdc
–80 –50 –30 Vdc
–5.0 Vdc
–100
mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
BC556
BC557
BC558
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
BC556
BC557
BC558
BC556
BC557
BC558
ICES
Min
–65
–45
–30
–80
–50
–30
–5.0
–5.0
–5.0
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
——
——
——
——
——
——
——
——
——
–2.0 –100
–2.0 –100
–2.0 –100
— –4.0
— –4.0
— –4.0
V
V
V
nA
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
BC556,B BC557A,B,C BC558B
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 13. Thermal Response
ZθJC(t) = (t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
–200
1 s 3 ms
–100
–50 TA = 25°C TJ = 25°C
BC558
–10
BC557
BC556
–5.0
–2.0
–1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0 –10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region — Safe Operating Area
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5