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PDF BC517 Data sheet ( Hoja de datos )
| Número de pieza | BC517 | |
| Descripción | Darlington Transistors | |
| Fabricantes | Motorola Inc | |
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Hay una vista previa y un enlace de descarga de BC517 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document
by BC517/D
BC517
COLLECTOR 1
BASE
2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCB
VEB
IC
PD
30 Vdc
40 Vdc
10 Vdc
1.0 Adc
625 mW
12 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
23
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Min Typ Max Unit
30 — — Vdc
40 — — Vdc
10 — — Vdc
— — 500 nAdc
— — 100 nAdc
— — 100 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
BC517
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k
700
500
300 TA = 25°C
200
1.0 ms
TC = 25°C 100 µs
1.0 s
FIGURE A
tP
PP
PP
100
70
50
30
20
10
0.4
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.6 1.0 2.0
4.0 6.0 10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
t1
1/f
+ +DUTY CYCLE
t1 f
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC517.PDF ] | |
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