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PDF BC490 Data sheet ( Hoja de datos )
| Número de pieza | BC490 | |
| Descripción | High Current Transistors | |
| Fabricantes | ON Semiconductor | |
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BC490
High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
−80
−80
−4.0
−1.0
625
5.0
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
BC
490
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BC490G
TO−92
(Pb−Free)
5000 Units / Bulk
Publication Order Number:
BC490/D
1 page  
BC490
−1.0
TJ = 25°C
−0.8
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
−1.0
TJ = 25°C
−0.8
−0.6
IC = −10 mA
−50
mA
−100 mA
−250 mA −500 mA
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5 −1.0 −2.0 −5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
−500
−0.2
0
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0 −5.0
IB, BASE CURRENT (mA)
−10 −20
Figure 12. Collector Saturation Region
−50
−0.8
−1.2
−1.6
−2.0 RqVB for VBE
−2.4
−2.8
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC490.PDF ] | |
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