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PDF BC489B Data sheet ( Hoja de datos )

Número de pieza BC489B
Descripción High Current Transistors(NPN Silicon)
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No Preview Available ! BC489B Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC489/D
High Current Transistors
NPN Silicon
BC489,A,B
COLLECTOR
1
2
BASE
MAXIMUM RATINGS
3
EMITTER
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
80
Vdc
VCBO
80
Vdc
VEBO
5.0
Vdc
IC 0.5 Adc
PD 625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
BC489
BC489A
BC489B
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
hFE
Min
80
80
5.0
40
60
100
160
15
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 100 nAdc
——
— 400
160 250
260 400
——
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

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BC489B pdf
–0.8
–1.2
–1.6
–2.0 RθVB for VBE
–2.4
–2.8
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 10. Base–Emitter Temperature Coefficient
–1.0
TJ = 25°C
–0.8
–0.6
–0.4
IC = –10 mA –50 mA –100 mA
–0.2
–250 mA –500 mA
0
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
IB, BASE CURRENT (mA)
Figure 12. Collector Saturation Region
–50
–1.0
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
BC489,A,B
–0.2
VCE(sat) @ IC/IB = 10
0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
–0.8
–1.2
–1.6
–2.0 RθVB for VBE
–2.4
–2.8
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500
Figure 13. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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