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PDF BC373 Data sheet ( Hoja de datos )
| Número de pieza | BC373 | |
| Descripción | High Voltage Darlington Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage
Darlington Transistors
NPN Silicon
Order this document
by BC372/D
BC372
BC373
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol BC372 BC373 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
100 80
100 80
12
1.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
BC372
BC373
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC372
BC373
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
BC372
BC373
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Typ Max Unit
100 —
80 —
100 —
80 —
12 —
Vdc
—
—
Vdc
—
—
— Vdc
nAdc
— — 100
— — 100
— — 100 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC373.PDF ] | |
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