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PDF BC351 Data sheet ( Hoja de datos )
| Número de pieza | BC351 | |
| Descripción | PNP SILICON TRANSISTOR | |
| Fabricantes | Micro Electronics | |
| Logotipo |  |
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BC 337 / BC 338
NPN
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
Tj
TS
Grenzwerte (TA = 25/C)
BC 337
BC 338
45 V
25 V
50 V
30 V
5V
625 mW 1)
800 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
Group -16 hFE
VCE = 1 V, IC = 100 mA
Group -25 hFE
Group -40 hFE
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 40 V
VCE = 20 V
VCE = 40 V, Tj = 125/C
VCE = 20 V, Tj = 125/C
BC 337
BC 338
BC 337
BC 338
ICES
ICES
ICES
ICES
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
100 160 250
160 250 400
250 400 630
– – 200 nA
– – 200 nA
– – 10 :A
– – 10 :A
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4 01.11.2003
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC351.PDF ] | |
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