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PDF BC307C Data sheet ( Hoja de datos )
| Número de pieza | BC307C | |
| Descripción | Amplifier Transistors(PNP Silicon) | |
| Fabricantes | ON Semiconductor | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC307/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 307 308C 309 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–45 –25 –25 Vdc
–50 –30 –30 Vdc
–5.0 Vdc
–100
mAdc
350 mW
2.8 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
357 °C/W
Thermal Resistance, Junction to Case
RqJC
125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC307
BC308C
BC309B
V(BR)CEO
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC307
BC308C
BC309B
V(BR)EBO
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0)
(VCES = –30 V, VBE = 0)
BC307
BC308C
BC309B
ICES
(VCES = –50 V, VBE = 0) TA = 125°C
BC307
(VCES = –30 V, VBE = 0) TA = 125°C
BC308C
BC309B
Min
–45
–25
–25
–5.0
–5.0
–5.0
—
—
—
—
—
—
BC307,B,C
BC308C
BC309B
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
——
——
— — Vdc
——
——
–0.2 –15 nAdc
–0.2 –15
–0.2 –15
–0.2 –4.0
µA
–0.2 –4.0
–0.2 –4.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BC307C.PDF ] | |
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