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Número de pieza | BD435 | |
Descripción | Medium Power Linear and Switching Applications | |
Fabricantes | Fairchild Semiconductor | |
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No Preview Available ! BD433/435/437
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD433
: BD435
: BD437
VCES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
VCEO
Collector-Emitter Voltage
: BD433
: BD435
: BD437
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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Definition of Terms
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Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BD435.PDF ] |
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BD433 | NPN SILICON EPIBASE TRANSISTORS | Siemens Semiconductor Group |
BD433 | Medium Power Linear and Switching Applications | Fairchild Semiconductor |
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