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PDF BD377 Data sheet ( Hoja de datos )
| Número de pieza | BD377 | |
| Descripción | Medium Power Linear and Switching Applications | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD375
: BD377
: BD379
VCEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-126
1. Emitter 2.Collector 3.Base
Value
50
75
100
45
60
80
5
2
3
1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
IC = 100mA, IB = 0
45
60
80
V
V
V
BVCBO
Collector-Base
Breakdown Voltage
: BD375
: BD377
: BD379
IC = 100µA, IE = 0
50
75
100
V
V
V
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
tON
tOFF
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD375
: BD377
: BD379
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
2 µA
2 µA
2 µA
VEB = 5V, IC = 0
100 µA
VCE = 2V, IC = 0.15A
VCE = 2V, IC = 1A
40
20
375
IC = 1A, IB = 0.1A
1V
VCE = 2V, IC = 1A
1.5 V
VCC = 30V, IC = 0.5A
IB1 = - IB2 = 0.05A
RL = 60Ω
50
500
ns
ns
hFE Classification
Classification
hFE1
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BD377.PDF ] | |
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