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PDF BD179 Data sheet ( Hoja de datos )
| Número de pieza | BD179 | |
| Descripción | Medium Power Linear and Switching Applications | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
*Collector-Base Voltage
: BD175
: BD177
: BD179
VCEO
Collector-Emitter Voltage
: BD175
: BD177
: BD179
VEBO
IC
ICP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-126
1. Emitter 2.Collector 3.Base
Value
45
60
80
45
60
80
5
3
7
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
IC = 100mA, IB = 0
45
60
80
V
V
V
ICBO
Collector Cut-off Current
: BD175
: BD177
: BD179
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 150mA
VCE = 2V, IC = 1A
IC = 1A, IB = 0.1A
VCE = 2V, IC = 1A
VCE = 10V, IC = 250mA
40
15
3
100 µA
100 µA
100 µA
1 mA
250
0.8 V
1.3 V
MHz
hFE Classificntion
Classification
hFE1
* Classification 16: Only BD175
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BD179.PDF ] | |
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