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PDF BCW68GLT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW68GLT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW68GLT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
–45
–60
–5.0
–800
Vdc
Vdc
Vdc
mAdc
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
Collector Cutoff Current
(VCE= –45 Vdc, IE = 0)
(VCE= –45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
IEBO
–45
–60
–5.0
—
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
BCW68GLT1
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— –20 nAdc
— –10 µAdc
— –20 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BCW68GLT1.PDF ] | |
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