DataSheet.es    


PDF BCW66G Data sheet ( Hoja de datos )

Número de pieza BCW66G
Descripción NPN General Purpose Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de BCW66G (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! BCW66G Hoja de datos, Descripción, Manual

BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
3
2
1 SOT-23
Mark: EG
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
45
75
5
1
- 55 ~ +150
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
IC = 10µA
IC = 10mA
IE = 10µA
VCB = 45V, IE = 0
VCB = 45V, IE = 0
TA = 150°C
VEB = 4V
VCE = 10V, IC = 100µA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, f = 1MHz
VEB = 0.5V, f = 1MHz
VCE = 10V, IC = 20mA,
f = 100MHz
NF Noise Figure
VCE = 5V, IC = 0.2mA, RS = 1k,
f = 1KHz, BW = 200Hz
ton Turn-On Time
toff Turn-Off Time
IB1 = IB2 = 15mA
IC = 150mA, RL = 150
Min. Typ. Max. Units
75 V
45 V
5V
20 nA
20 µA
20 nA
50
110
160 400
60
0.3 V
0.7
2V
12 pF
80 pF
100 MHz
10 dB
100 ns
400
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet BCW66G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BCW66SMALL SIGNAL NPN TRANSISTORSSTMicroelectronics
STMicroelectronics
BCW66NPN SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
Zetex Semiconductors
BCW66NPN Silicon AF TransistorInfineon Technologies AG
Infineon Technologies AG
BCW66Surface mount Si-Epitaxial PlanarTransistorsDiotec Semiconductor
Diotec Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar