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Número de pieza | BCW66 | |
Descripción | NPN Silicon AF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW66 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
BCW65, BCW66
3
2
1 VPS05161
Type
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BCW65
BCW66
32 45
60 75
55
800
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001
1 page BCW65, BCW66
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 3 BCW 65/66
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00394
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3 BCW 65/66
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00395
10 1 10 1
55
100 100
55
10 -1
0 12
DC current gain hFE = f (IC)
VCE = 1V
3V
VBE sat
4
10 3 BCW 65/66
5
h FE
100 ˚C
25 ˚C
102 -50 ˚C
5
EHP00396
10 -1
0
200 400 600 mV 800
VCE sat
10 1
5
10 0
10 -1
5 10 0
5 10 1
5 102 mA 10 3
ΙC
5
Jul-10-2001
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BCW66.PDF ] |
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