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PDF BCW65ALT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW65ALT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW65ALT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
BCW65ALT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BCW65ALT1 = EA
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
IEBO
Min
32
60
5.0
—
—
—
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 20 nAdc
— 20 µAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BCW65ALT1.PDF ] | |
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