DataSheet.es    


PDF BCW33LT1 Data sheet ( Hoja de datos )

Número de pieza BCW33LT1
Descripción General Purpose Transistor
Fabricantes Motorola Inc 
Logotipo Motorola  Inc Logotipo



Hay una vista previa y un enlace de descarga de BCW33LT1 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! BCW33LT1 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW33LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
BCW33LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BCW33LT1 = D3
Symbol
VCEO
VCBO
VEBO
IC
Value
20
30
5.0
100
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
32 — Vdc
32 — Vdc
5.0 — Vdc
— 100 nAdc
— 10 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

1 page




BCW33LT1 pdf
TYPICAL DYNAMIC CHARACTERISTICS
BCW33LT1
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
tr
td @ VBE(off) = 0.5 Vdc
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn–On Time
50 70 100
1000
700
500 ts
300
200
100 tf
70
50
30 VCC = 3.0 V
20
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
1.0 2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn–Off Time
50 70 100
500
TJ = 25°C
f = 100 MHz
300
200
VCE = 20 V
5.0 V
10
TJ = 25°C
7.0 f = 1.0 MHz
Cib
5.0
Cob
3.0
100 2.0
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 14. Current–Gain — Bandwidth Product
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
20
50
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
FIGURE 19A
DUTY CYCLE, D = t1/t2
P(pk) D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1 (SEE AN–569)
t2
ZθJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 16. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet BCW33LT1.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BCW33LT1General Purpose TransistorMotorola  Inc
Motorola Inc
BCW33LT1General Purpose Transistors(NPN Silicon)Leshan Radio Company
Leshan Radio Company
BCW33LT1GGeneral Purpose TransistorON Semiconductor
ON Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar