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PDF BCW30LT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW30LT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW29LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW29LT1
BCW30LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
VCEO
VCBO
–32
–32
Vdc
Vdc
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Vdc
mAdc
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IE = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VEB = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IC = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0)
(VCB = –32 Vdc, IE = 0, TA = 100°C)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Max Unit
–32 — Vdc
–32 — Vdc
–32 — Vdc
–5.0 — Vdc
—
–100
nAdc
— –10 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
TYPICAL DYNAMIC CHARACTERISTICS
BCW29LT1 BCW30LT1
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn–On Time
50 70 100
1000
700 VCC = –ā3.0 V
500 IC/IB = 10
300
ts
IB1 = IB2
TJ = 25°C
200
100
70
50
tf
30
20
10
–1.0
–ā2.0 –ā3.0 –ā5.0 –ā7.0 –10 –ā20 –ā30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn–Off Time
–ā50 –ā70 –100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 13. Current–Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
50
20
VCE = –10 Vdc
10 f = 1.0 kHz
7.0
BCW29LT1
TA = 25°C
5.0 hfe ≈ 200
3.0 @ IC = –1.0 mA
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30 BCW29LT1
20
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCW30LT1.PDF ] | |
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