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PDF BCV64B Data sheet ( Hoja de datos )

Número de pieza BCV64B
Descripción PNP general purpose double transistor
Fabricantes NXP Semiconductors 
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BCV64B
PNP general-purpose double transistor
Rev. 4 — 2 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV64B
Package
NXP
SOT143B
JEITA
-
PNP complement
BCV63B
1.2 Features and benefits
„ Low current (max. 100 mA)
„ Low voltage (max. 30 V and 6 V)
„ AEC-Q101 qualified
„ Small SMD plastic package
1.3 Applications
„ General-purpose switching and amplification
„ For use in Schmitt trigger applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
IC collector current
Transistor TR1
VCEO
hFE
collector-emitter voltage
DC current gain
Transistor TR2
VCEO
hFE
collector-emitter voltage
DC current gain
Conditions
open base
VCE = 5 mV;
IC = 2 mA
open base
VCE = 700 V;
IC = 2 mA
Min Typ Max Unit
- - 100 mA
--
220 -
30 V
475
-
[1] 220
-
-
6 V
475
[1] Due to matched dies, hFE values for TR2 are the same as for TR1.

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BCV64B pdf
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
1000
hFE
800
mgt715
600
(1)
400
(2)
200 (3)
0
102
101
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 1. DC current gain as a function of collector
current; typical values
104
VCEsat
(mV)
mgt717
103
102
(1)
(3) (2)
10
101
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 3. Collector-emitter saturation voltage as a
function of collector current; typical values
1200
VBE
(mV)
1000
mgt716
800
600
(1)
(2)
400
(3)
200
0
102
101
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. Base-emitter voltage as a function of collector
current; typical values
1200
VBEsat
(mV)
1000
800
600
400
(1)
(2)
(3)
mgt718
200
0
101
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
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BCV64B arduino
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
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