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Número de pieza | BCV64B | |
Descripción | PNP general purpose double transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BCV64B
PNP general-purpose double transistor
Rev. 4 — 2 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV64B
Package
NXP
SOT143B
JEITA
-
PNP complement
BCV63B
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
IC collector current
Transistor TR1
VCEO
hFE
collector-emitter voltage
DC current gain
Transistor TR2
VCEO
hFE
collector-emitter voltage
DC current gain
Conditions
open base
VCE = −5 mV;
IC = −2 mA
open base
VCE = −700 V;
IC = −2 mA
Min Typ Max Unit
- - −100 mA
--
220 -
−30 V
475
-
[1] 220
-
-
−6 V
475
[1] Due to matched dies, hFE values for TR2 are the same as for TR1.
1 page NXP Semiconductors
BCV64B
PNP general-purpose double transistor
1000
hFE
800
mgt715
600
(1)
400
(2)
200 (3)
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
−104
VCEsat
(mV)
mgt717
−103
−102
(1)
(3) (2)
−10
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Collector-emitter saturation voltage as a
function of collector current; typical values
−1200
VBE
(mV)
−1000
mgt716
−800
−600
(1)
(2)
−400
(3)
−200
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. Base-emitter voltage as a function of collector
current; typical values
−1200
VBEsat
(mV)
−1000
−800
−600
−400
(1)
(2)
(3)
mgt718
−200
0
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page NXP Semiconductors
BCV64B
PNP general-purpose double transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
11 of 12
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Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BCV64B.PDF ] |
Número de pieza | Descripción | Fabricantes |
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