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PDF BCV61 Data sheet ( Hoja de datos )

Número de pieza BCV61
Descripción NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



Total 5 Páginas
		
BCV61 Hoja de datos, Descripción, Manual
NPN Silicon Double Transistors
Preliminary Data
q To be used as a current mirror
q Good thermal coupling and VBE matching
q High current gain
q Low emitter-saturation voltage
BCV 61
Type
BCV 61 A
BCV 61 B
BCV 61 C
Marking
1Js
1Ks
1Ls
Ordering Code
(tape and reel)
Q62702-C2155
Q62702-C2156
Q62702-C2157
Pin Configuration
Package1)
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
Collector current
Collector peak current
Base peak current (transistor T1)
Total power dissipation, TS 99 ˚C2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Values
30
Unit
V
30
6
100 mA
200
200
300 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
240
170
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
K/W
Semiconductor Group
1
5.91

1 page

BCV61 pdf
BCV 61
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
5

5 Page


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