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PDF BCV29 Data sheet ( Hoja de datos )
| Número de pieza | BCV29 | |
| Descripción | NPN Silicon Darlington Transistors | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCV29 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCV29, BCV49
1
2
3
2
Type
BCV29
BCV49
Marking
EF
EG
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Collector-base voltage
BCV29
BCV49
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation-
TS ≤ 130 °C
Junction temperature
Storage temperature
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
Package
SOT89
SOT89
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
30
60
40
80
10
500
800
100
200
1
150
-65 ... 150
Unit
V
mA
W
°C
1 2011-10-05
1 page  
BCV29, BCV49
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3 BCV 29/49
MHz
fT
EHP00321
10 2
5
10 1
10 0 10 1 10 2 mA
ΙC
Total power dissipation Ptot = ƒ(TS)
10 3
19
pF
15
13
11
CEB
9
7
5
3
10 4 8 12
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
CCB
16 V
22
VCB/VEB
1200
mW
800
600
400
200
5 BCV 29/49
Ptot max
Ptot DC
10 2
5
10 1
5
EHP00319
D = tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
T
00 15 30 45 60 75 90 105 120 °C 150
TS
10 0
10 -6 10 -5
10 -4 10 -3
10 -2
s
tp
10 0
5 2011-10-05
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BCV29.PDF ] | |
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