|
|
PDF BCR5AS Data sheet ( Hoja de datos )
| Número de pieza | BCR5AS | |
| Descripción | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BCR5AS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5AS
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
∗
VOLTAGE
CLASS
0.5±0.1
• IT (RMS) ........................................................................ 5A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
∗ Measurement point of
case temperature
123
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120
100
80
60
III QUADRANT
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5 IRGT III
4
3
2 IRGT I
102
7 IFGT I
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
102
TYPICAL
7 EXAMPLE
5
4
Tj = 125°C
3 IT = 4A
τ = 500µs
2 VD = 200V
f = 3Hz
101
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT (di/dt)C
τt
7
5
4
3 MINIMUM
2 CHARAC-
TERISTICS
10010V0 ALU2E 3 4 5 7 101
I QUADRANT
III QUADRANT
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR5AS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BCR5AM | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
| BCR5AM | Triac 5 Amperes/400-600 Volts |  Powerex Power Semiconductors |
| BCR5AM-12 | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
| BCR5AM-12L | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |