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PDF BCR400W Data sheet ( Hoja de datos )

Número de pieza BCR400W
Descripción Application Considerations for the Integrated Bias Control Circuits
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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BCR400W
Active Bias Controller
Characteristics
 Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
 Low voltage drop of 0.7V
Application notes
 Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
 Ideal supplement for Sieget and other transistors
 also usable as current source up to 5mA
3
4
2
1 VPS05605
43
12
EHA07188
Type
Marking
Pin Configuration
Package
BCR400W W4s
1=GND/ENPN 2=Contr/BNPN 3VS 4=Rext/CNPN SOT343
(ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation, TS = 117 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VS
IContr.
VContr.
VR
Ptot
Tj
Tstg
RthJS
Value
18
10
16
0.5
330
150
-65 ... 150
 100
Unit
V
mA
V
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-07-2001

1 page




BCR400W pdf
BCR400W
Total power dissipation Ptot = f (TS)
400 Note that up to TS=115°C
mW it is not possible to exceed Ptot
respecting the maximum
300 ratings of VS and IContr.
The collector or drain
250 current (respectively) of
the stabilized RF transistor
200 does not affect BCR 400
directly, as it provides just the
150 base current.
100
50
00 20 40 60 80 100 120 °C 150
TS
Typical application for GaAs FET
with active bias controller
RF IN RF OUT
100 kBCR 400
14
100 pF
100 k
- VG
2
1 nF
R ext
3
+VS
5
EHA07190
Aug-07-2001

5 Page










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