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Número de pieza | BCR3AS | |
Descripción | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR3AS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! BCR3AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
∗
VOLTAGE
CLASS
0.5±0.1
• IT (RMS) ........................................................................ 3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
∗ Measurement point of
case temperature
123
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page COMMUTATION CHARACTERISTICS
102 VOLTAGE WAVEFORM
7t
5
4
(dv/dt)C
VD
3
2
CURRENT WAVEFORM
IT (di/dt)C
τt
101
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
7
5
4
3
MINIMUM
2 CHARAC-
TERISTICS
100 VALUE
100 2 3 4 5 7 101
I QUADRANT
III QUADRANT
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5 IRGT III
4
3 IRGT I
2 IFGT I
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BCR3AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCR3AM | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
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