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PDF BCR16PM Data sheet ( Hoja de datos )
| Número de pieza | BCR16PM | |
| Descripción | MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR16PM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BCR16PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54 2.54
0.5 2.6
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
123
2
∗ Measurement point of
case temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial power frequency, sine full wave 360° conduction, Tc=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
16
160
107.5
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120 I QUADRANT
III QUADRANT
100
80 # 2
#1
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5 IFGT I
4
3 IRGT I
2 IRGT III
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
102 Tj = 125°C
7 IT = 4A
5 τ = 500µs
3 VD = 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT (di/dt)C
τt
101
7 I QUADRANT
5
3 MINIMUM
2 CHARAC-
100 TERISTICS
7 VALUE
5
III QUADRANT
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR16PM.PDF ] | |
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