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Número de pieza | BCR10PN | |
Descripción | NPN/PNP Silicon Digital Transistor Array | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR10PN (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! BCR10PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=10k, R2 =10k)
4
5
6
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
3
2
1
VPS05604
Type
BCR10PN
Marking
W1s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Value
50
50
10
20
100
250
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
140
K/W
1 Nov-29-2001
1 page BCR10PN
Total power dissipation Ptot = f (TS)
300
mW
200
150
100
50
0
0
20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
10 3
K/W
10 2
10 1
0.5
0.2
0.1
0.05
0.02
10 0 0.01
0.005
D=0
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
-
D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Nov-29-2001
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BCR10PN.PDF ] |
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