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Número de pieza | BCR10PN | |
Descripción | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR10PN (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=10kΩ, R2=10kΩ)
Tape loading orientation
BCR 10PN
Type
Marking Ordering Code Pin Configuration
Package
BCR 10PN W1s
Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
20
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 275
≤ 140
K/W
Semiconductor Group
1
Nov-26-1996
1 page BCR 10PN
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
TA
150
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f(tp)
Permissible Pulse Load Ptotmax / PtotDC = f(tp)
10 3
K/W
RthJS 10 2
10 1
10 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 3
-
Ptotmax/PtotDC
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Nov-26-1996
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BCR10PN.PDF ] |
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