|
|
PDF BCR08AS-8 Data sheet ( Hoja de datos )
| Número de pieza | BCR08AS-8 | |
| Descripción | TRIAC | |
| Fabricantes | Powerex Power Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BCR08AS-8 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
BCR08AS-8
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
123
• IT (RMS) ..................................................................... 0.8A
• VDRM ....................................................................... 400V
• IFGT !, IRGT !, IRGT # ............................................. 5mA
• IFGT # ..................................................................... 10mA
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 (marked “B•”)
400
500
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C V4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Feb.1999
1 page  
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
IRGT I
IRGT III
IFGT III
IFGT I
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 3 TEST PROCEDURE 4
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR08AS-8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BCR08AS-12 | TRIAC |  Renesas Technology |
| BCR08AS-8 | TRIAC |  Mitsubishi Electric Semiconductor |
| BCR08AS-8 | TRIAC | Powerex Power Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |