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Número de pieza | BCR08AS | |
Descripción | TRIAC | |
Fabricantes | Powerex Power Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR08AS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! BCR08AS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
123
• IT (RMS) ..................................................................... 0.8A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # .............................................. 5mA
• IFGT # ..................................................................... 10mA
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12 (marked “BF”)
600
720
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Mar. 2002
1 page GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
IRGT I
IRGT III
IFGT III
IFGT I
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 3 TEST PROCEDURE 4
Mar. 2002
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BCR08AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCR08AM | LOW POWER USE PLANAR PASSIVATION TYPE | RENESAS |
BCR08AM-12 | Triac Low Power Use | Renesas Technology |
BCR08AM-14 | LOW POWER USE PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
BCR08AM-14A | Triac Low Power Use | Renesas Technology |
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