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PDF BCP56-10 Data sheet ( Hoja de datos )
| Número de pieza | BCP56-10 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
BCP56
C
COMPLEMENTARY TYPE BCP53
PARTMARKING DETAILS BCP56
BCP56 10
BCP56 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E
C
B
VALUE
100
80
5
1.5
1
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V IC= 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
20 µA
10 µA
0.5 V
VCB=30V
VCB=30V, Tamb=150°C
VEB=5V
IC=500mA, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
1.0 V
IC=500mA, VCE=2V*
Static Forward Current hFE
Transfer Ratio
40
25
250
BCP56-10 63
100 160
BCP56-16 100 160 250
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
IC=150mA, VCE=2V*
IC=150mA, VCE=2V*
Transition Frequency fT
125 MHz IC=50mA, VCE=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 18
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| PDF Descargar | [ Datasheet BCP56-10.PDF ] | |
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