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PDF BCP53-10 Data sheet ( Hoja de datos )
| Número de pieza | BCP53-10 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
BCP53
C
COMPLEMENTARY TYPE BCP56
E
PARTMARKING DETAILS BCP53
BCP53 10
C
B
BCP53 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-100
-80
-5
-1.5
-1
2
-55 to +150
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -100
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V IC=- 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-100
-20
-10
-0.5
nA
µA
µA
V
VCB=-30V
VCB=-30V, Tamb=150°C
VEB=-5V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0 V
IC=-500mA, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
40
25
250
BCP53-10 63
100 160
BCP53-16 100 160 250
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-150mA, VCE=-2V*
Transition Frequency fT
125 MHz IC=-50mA, VCE=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 15
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| PDF Descargar | [ Datasheet BCP53-10.PDF ] | |
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