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PDF BFR106 Data sheet ( Hoja de datos )
| Número de pieza | BFR106 | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain amplifiers
• For linear broadband amplifiers
• Special application: antenna amplifiers
• Complementary type: BFR 194 (PNP)
BFR 106
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 106 R7s
Q62702-F1219
1=B 2=E 3=C 4=E
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 73 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
3
100
12
700
150
- 65 ... + 150
- 65 ... + 150
≤ 110
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
1 page  
BFR 106
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
800
mW
Ptot
600
TS
500
400
300 TA
200
100
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0D.0=050
10 2
Ptotmax/PtotD- C
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-11-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFR106.PDF ] | |
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