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PDF BFQ74 Data sheet ( Hoja de datos )

Número de pieza BFQ74
Descripción NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range/ and broadband analog and digital applications)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BFQ74 Hoja de datos, Descripción, Manual

NPN Silicon RF Transistor
q For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 74
Marking
74
Ordering Code
(tape and reel)
Q62702-F788
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f 10 MHz
Base current
Total power dissipation, TS 115 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
Ptot
Tj
TA
Tstg
Values
Unit
16 V
25
25
2
35 mA
45
5
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
280
200
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.

1 page




BFQ74 pdf
BBFFQQ 7744
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
GHz
dB
dB
MAG ANG
IC = 3 mA, VCE = 10 V, Z0 = 50
0.01 0.7
(ZS = 150 )
IC = 10 mA, VCE = 10 V, Z0 = 50
0.01 1.05 –
(ZS = 75 )
0.8 1.3 17.5 0.22 82
2.0 2.5 11.5 0.20 137
RN
11.5
23.5
N
0.20
0.60
F50
dB
1.2
1.2
1.4
2.7
G p(F50)
dB
16.8
10
Noise figure F = f (IC)
VCE = 10 V, f = 10 MHz

5 Page





BFQ74 arduino
BBFFQQ 7744
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 10 V, Z0 = 50
0.1 0.83 – 35 22.64
0.2 0.71 – 65 18.55
0.3 0.63 – 89 14.98
0.4 0.58 – 105 12.22
0.6 0.55 – 130 8.96
0.8 0.52 – 148 6.91
1.0 0.53 – 161 5.64
1.2 0.52 – 171 4.76
1.5 0.52
176 3.87
1.8 0.53
167 3.25
2.0 0.55
161 2.95
2.5 0.57
148 2.41
3.0 0.60
135 2.06
3.5 0.62
125 1.82
4.0 0.63
112 1.62
4.5 0.67
103 1.46
5.0 0.67
92 1.32
155
134
121
112
98
89
81
75
65
57
52
40
29
18
6
–5
– 15
S12
MAG
ANG
0.015
0.026
0.034
0.039
0.047
0.053
0.058
0.064
0.072
0.083
0.089
0.107
0.127
0.148
0.173
0.194
0.217
70
59
53
48
46
44
45
45
46
46
47
46
43
41
36
32
25
S22
MAG
0.92
0.80
0.70
0.63
0.54
0.49
0.46
0.44
0.43
0.42
0.41
0.39
0.38
0.37
0.37
0.37
0.38
ANG
– 13
– 23
– 27
– 30
– 32
– 34
– 35
– 37
– 40
– 44
– 47
– 56
– 67
– 78
– 92
– 106
– 123
S11, S22 = f (f)
IC = 10 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f)
IC = 10 mA, VCE = 10 V, Z0 = 50

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