|
|
PDF BFP640 Data sheet ( Hoja de datos )
| Número de pieza | BFP640 | |
| Descripción | NPN Silicon Germanium RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BFP640 (archivo pdf) en la parte inferior de esta página. Total 28 Páginas | ||
|
No Preview Available !
BFP640
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 2.0, 2015-03-13
RF & Protection Devices
1 page  
BFP640
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP640 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . 23
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP640: R4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 2.0, 2015-03-13
5 Page 
5 Electrical Characteristics
BFP640
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4.1
Collector emitter leakage current
ICES
–
Values
Typ. Max.
4.7 –
Unit
V
1 4001) nA
1 401)
Collector base leakage current
Emitter base leakage current
ICBO
IEBO
–
–
1 401) nA
1 401) nA
DC current gain
hFE 110 180 270
1) Maximum values not limited by the device but by the short cycle time of the 100% test
Note / Test Condition
IC = 1 mA, IB = 0
Open base
VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0
E-B short circuited
VCB = 5V, IE = 0
Open emitter
VEB = 0.5V, IC = 0
Open collector
VCE = 3 V, IC = 30 mA
Pulse measured
5.2 General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Transition frequency
Min.
fT –
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
Values
Typ. Max.
42 –
0.08 –
0.24 –
0.51 –
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 30 mA
f = 2 GHz
VCB = 3 V, VBE = 0
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
VEB = 0.5 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 2.0, 2015-03-13
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet BFP640.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFP640 | NPN Silicon Germanium RF Transistor | Infineon Technologies AG |
| BFP640ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor |  Infineon |
| BFP640F | NPN Silicon Germanium RF Transistor | Infineon Technologies AG |
| BFP640FESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |