|
|
Número de pieza | BFP540F | |
Descripción | NPN Silicon RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP540F (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
BFP540F
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding Gms = 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line
3
4
TSFP-4
2
1
to p v ie w
43
ATs
12
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP540F
Marking
Pin Configuration
ATs* 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1) TS ≤ 80°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
4.5
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
Value
≤ 280
Unit
V
mA
mW
°C
Unit
K/W
1 Jan-28-2004
1 page Total power dissipation Ptot = ƒ(TS)
BFP540F
Permissible Pulse Load RthJS = ƒ(tp)
300
mW
200
150
100
50
10 3
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
00 15 30 45 60 75 90 105 120 °C 150
TS
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
10 1 0.3
pF
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
0.2
0.15
0.1
0.05
00 2 4 6 8 10 V 14
VCB
5 Jan-28-2004
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFP540F.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP540 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP540ESD | Low Noise Silicon Bipolar RF Transistor | Infineon |
BFP540F | NPN Silicon RF Transistor | Infineon Technologies AG |
BFP540FESD | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |