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PDF BFP540 Data sheet ( Hoja de datos )
| Número de pieza | BFP540 | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP540 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
• Outstanding Gms = 21.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.9 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
3
4
BFP540
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540
Marking
Pin Configuration
ATs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
VCEO
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current
Total power dissipation1)
IB
Ptot
TS ≤ 77°C
Junction temperature
TJ
Ambient temperature
TA
Storage temperature
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5
4
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
1 2013-09-20
1 page  
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
30
dBm
26
24
22
20
18
16
14
12
10
8
6
4
20
4V
3V
2V
1.5V
1V
10 20 30 40 50 60 70 80 mA 100
IC
Power gain Gma, Gms = ƒ(IC)
VCE = 2V
f = Parameter in GHz
30
dB
1
20
2
15
3
4
10
5
6
5
00 10 20 30 40 50 60 70 mA 90
IC
BFP540
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
35
GHz
25
20 4
3
15
2
10 1.5
1
5
0.5
00 10 20 30 40 50 60 70 mA 90
IC
Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 2V, IC = 20mA
50
dB
40
35
30
Gms
25
20
Gma
15 |S21|²
10
50
1
2
3
4 GHz
6
G
5 2013-09-20
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BFP540.PDF ] | |
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