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PDF BFP520F Data sheet ( Hoja de datos )
| Número de pieza | BFP520F | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
Outstanding Gms = 22.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz
• Transition frequency fT = 45 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFP520F
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520F
Marking
Pin Configuration
APs 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 98 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the emitter lead at the soldering point to pcb
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1
Value
2.5
2.4
10
10
1
50
5
120
150
-55 ... 150
Unit
V
mA
mW
°C
Value
430
Unit
K/W
2013-09-19
1 page  
Package TSFP-4
BFP520F
5 2013-09-19
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFP520F.PDF ] | |
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