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Número de pieza | BFP420 | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP420 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• For high gain and low noise amplifiers
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz
Outstanding Gms = 21 dB at 1.8 GHz
• For oscillators up to 10 GHz
• Transition frequency fT = 25 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
3
4
BFP420
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420
Marking
Pin Configuration
AMs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 98 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1
Value
4.5
4.1
15
15
1.5
60
9
210
150
-55 ... 150
Unit
V
mA
mW
°C
Value
250
Unit
K/W
2013-09-19
1 page Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
30
GHz
2 to 4
1.5
24 1
22
20 0.75
18
16
14
12 0.5
10
8
6
4
2
00 5 10 15 20 25 30 mA 40
IC
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
30
dB
0.9
24
22 1.8
20
18 2.4
16 3
14
4
12
5
10 6
8
6
4
2
00 4 8 12 16 20 24 28 32 mA 40
IC
BFP420
Power gain Gma, Gms, |S21|² = ƒ (f)
VCE = 2 V, IC = 20 mA
44
40
36
32
G
ms
28
24
20
16
|S |2
21
12
G
ma
8
4
0
012345
f [GHz]
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
6
30
dB
0.9
24
22 1.8
20
2.4
18
16 3
14 4
12 5
10 6
8
6
4
2
00 0.5 1 1.5 2 2.5 3 3.5 V 4.5
VCE
5 2013-09-19
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BFP420.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP420 | NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) | Siemens Semiconductor Group |
BFP420 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP420F | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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