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PDF BFP280W Data sheet ( Hoja de datos )
| Número de pieza | BFP280W | |
| Descripción | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
• fT = 7,5GHz
F = 1.5dB at 900MHz
BFP 280W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 280W REs
Q62702-F1504
1=E 2=C 3=E 4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 116 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
8
10
10
2
10
1.2
80
150
- 65 ... + 150
- 65 ... + 150
≤ 430
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
1 page  
BFP 280W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
100
mW
Ptot 80
70
60
TS
50
TA
40
30
20
10
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 1
RthJSK/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/PtotDC
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-12-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP280W.PDF ] | |
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