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Número de pieza | BFP196 | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP196 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
3
4
BFP196
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196
Marking
Pin Configuration
RIs 1 = C 2 = E 3 = B 4 = E -
-
Package
SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 77°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
12
20
20
2
150
15
700
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
105 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04
1 page Package SOT143
BFP196
5 2014-04-04
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFP196.PDF ] |
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