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PDF BFP183 Data sheet ( Hoja de datos )
| Número de pieza | BFP183 | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• fT = 8 GHz
F = 1.2 dB at 900 MHz
BFP 183
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 183 RHs
Q62702-F1382
1=C 2=E 3=B 4=E
Package
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 76 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
65
5
250
150
- 65 ... + 150
- 65 ... + 150
≤ 295
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996
1 page  
BFP 183
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
150
TS
100
TA
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJS K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-13-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP183.PDF ] | |
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