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PDF BFP182W Data sheet ( Hoja de datos )
| Número de pieza | BFP182W | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP182W
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP182W
Marking
Pin Configuration
RGs 1=E 2=C 3=E 4 = B -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 91 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
Value
12
20
20
2
35
4
250
150
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
235
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
1 2013-07-25
1 page  
Package SOT343
BFP182W
5 2013-07-25
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFP182W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFP182 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) |  Siemens Semiconductor Group |
| BFP182 | NPN Silicon RF Transistor | Infineon Technologies AG |
| BFP182R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) | Siemens Semiconductor Group |
| BFP182R | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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