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PDF BFP182 Data sheet ( Hoja de datos )
| Número de pieza | BFP182 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
BFP182
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP182
Marking
RGs
Pin Configuration
1=C 2=E 3=B 4=E
Package
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 69 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
12
20
20
2
35
4
250
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point 2)
RthJS
325
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-09-2001
1 page  
BFP182
Total power dissipation Ptot = f (TS)
300
mW
200
150
100
50
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
10 3
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 2
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
-
D=0
0.005
0.01
0.02
10 1 0.05
0.1
0.2
0.5
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Aug-09-2001
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFP182.PDF ] | |
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