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PDF BFP181W Data sheet ( Hoja de datos )

Número de pieza BFP181W
Descripción NPN Silicon RF Transistor
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BFP181W Hoja de datos, Descripción, Manual

NPN Silicon RF Transistor
 For low noise, high-gain broadband amplifier at
collector currents from 0.5 mA to 12 mA
 fT = 8 GHz
F = 1.45 dB at 900 MHz
BFP 181W
3
4
2
1 VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 181W
RFs 1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS  91 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
 340
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-12-1999

1 page




BFP181W pdf
BFP 181W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
200
mW
160 TS
140
120
100 TA
80
60
40
20
00 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
10 3
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 2
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
-
D=0
0.005
0.01
0.02
10 1
0.05
0.1
0.2
0.5
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Oct-12-1999

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